Abstract
This paper presents an overview on the approaches and methodologies that were reported so far in modelling millimeter-wave CMOS active device. The paper begins by highlighting the limitations of the existing CMOS model provided by the foundry. Next, the performance metrics of millimeter-wave CMOS active device is described in brief. Then, the device modelling process for the active device which covers on the design of its test-structures, on-wafer measurement, device characterization and model generation were described. Finally, the current and future trends of mm-wave CMOS transistor are discussed. Device modelling or characterization is the first step involved in designing mm-wave CMOS circuit blocks thus accurate model for active device is required to ensure the success fullness in implementing the circuits.